 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) TPC8403 Motor Drive Applications Notebook PC Applications Portable Equipment Applications * * * * P Channel RDS (ON) = 45 m (typ.) N Channel RDS (ON) = 25 m (typ.) High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.) N Channel |Yfs| = 7.8 S (typ.) Low leakage current: P Channel IDSS = -10 A (VDS = -30 V) N Channel IDSS = 10 A (VDS = 30 V) Low drain-source ON resistance: Unit: mm Enhancement mode : P Channel Vth = -1.0~-2.2 V (VDS = -10 V, ID = -1 mA) : N Channel Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD(1) PD(2) PD(1) PD(2) EAS IAR EAR Tch Tstg Rating P Channel N Channel -30 -30 20 -4.5 -18 1.5 1.1 0.75 0.45 26.3 (Note 4a) -4.5 0.11 150 -55~150 30 30 20 6 24 1.5 1.1 W 0.75 0.45 46.8 (Note 4b) 6 mJ A mJ C C Unit V V V A JEDEC JEITA TOSHIBA 2-6J1E Weight: 0.080 g (typ.) Drain power Single-device operation (Note 3a) dissipation (t = 10s) Single-device value at (Note 2a) dual operation (Note 3b) Drain power Single-device operation (Note 3a) dissipation (t = 10s) Single-device value at (Note 2b) dual operation (Note 3b) Single pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Circuit Configuration 8 7 6 5 1 2 N-ch 3 4 P-ch Note: Note 1, Note 2ab, Note 3ab, Note 4and Note 5: See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-13 TPC8403 Thermal Characteristics Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.3 Unit Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) 114 C/W 167 Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 2b) Single-device operation (Note 2a) 278 Marking TPC8403 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: a) VDD = -24 V, Tch = 25C (Initial), L = 1.0 mH, RG = 25 , IAR = -4.5 A b) VDD = 24 V, Tch = 25C (Initial), L = 1.0 mH, RG = 25 , IAR = 6.0 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: * on lower left of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2006-11-13 TPC8403 P-channel Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS ton 0V -10 V 4.7 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -30 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = -1 mA VGS = -4.5 V, ID = -2.2 A VGS = -10 V, ID = -2.2 A VDS = -10 V, ID = -2.2 A Min -30 -15 -1.0 3.1 Typ. 66 45 6.2 940 270 390 13 21 25 73 18 4 4 Max 10 -10 -2.2 90 55 ns nC pF Unit A A V V m S ID = -2.2 A VOUT RL = 6.8 VDD -15 V - Duty < 1%, tw = 10 s = VDD -24 V, VGS = -10 V, - ID = -4.5 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -4.5 A, VGS = 0 V Min Typ. Max -18 1.2 Unit A V 3 2006-11-13 TPC8403 N-channel Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS ton ID = 3.0 A VOUT 4.7 RL = 5.0 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 3 A VGS = 10 V, ID = 3 A VDS = 10 V, ID = 3 A Min 30 15 1.3 3.9 Typ. 38 25 7.8 850 180 270 11 18 6.5 27 17 3 4 Max 10 10 2.5 46 33 ns nC pF Unit A A V V m S 10 V 0V VDD 15 V - Duty < 1%, tw = 10 s = VDD 24 V, VGS = 10 V, - ID = 6 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 6 A, VGS = 0 V Min Typ. Max 24 -1.2 Unit A V 4 2006-11-13 TPC8403 P-channel ID - VDS -5 -10 V -8 V -4 -6 V -4 V -3.2 V Common source Ta = 25C Pulse test -3 V -2.8 V -3 -10 ID - VDS -4 V -3.6 V -10 V -8 V -6 V -3.4 V Common source Ta = 25C Pulse test -3.2 V -8 Drain current ID (A) Drain current ID (A) -6 -3 V -2 -2.6 V -4 -2.8 V -2.6 V -1 -2.4 V VGS = -2.2 V -2 -2.4 V VGS = -2.2 V 0 0 -1 -2 -3 -4 -5 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -18 Common source VDS = -10 V Pulse test -0.6 VDS - VGS Common source Ta = 25C Pulse test -14 VDS (V) Drain-source voltage -55C Ta = 100C -0.5 -0.4 Drain current ID (A) 25C -10 -0.3 -0.2 ID = -4.5 A -2.2 A -1.3A -2 -4 -6 -8 -10 -12 -6 -2 0 0 -1 -2 -3 -4 -5 -6 -0.1 0 0 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 50 30 Common source VDS = -10 V 100 RDS (ON) - ID VGS = -4.5 V (S) 50 Forward transfer admittance Yfs Drain-source ON resistance RDS (ON) (m) Ta = -55C 10 5 3 Ta = 100C 30 VGS = -10 V 25C 10 1 0.5 0.3 5 3 Common source Ta = 25C Pulse test -0.3 -1 -3 -10 -30 -100 0.1 -0.1 -0.3 -1 -3 -10 -30 -100 1 -0.1 Drain current ID (A) Drain current ID (A) 5 2006-11-13 TPC8403 P-channel RDS (ON) - Ta 120 ID = -4.5 A IDR - VDS (A) 100 Drain-source ON resistance RDS (ON) (m) -10 -5 -3 -10 80 VGS = -4.5 V -1.3 A -2.2 A Drain reverse current IDR -3 -5 -1 VGS = 0 V 60 ID = -4.5 A -1.3 A -2.2 A -1 -0.5 -0.3 40 VGS = -10 V 20 Common source Pulse test -40 0 40 80 120 160 0 -80 -0.1 0 Common source Ta = 25C Pulse test 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 -3 Vth - Ta Common source VDS = -10 V ID = -1 mA Pulse test 1000 Ciss Coss Vth (V) Gate threshold voltage Capacitance C (pF) -2 100 Crss -1 10 Common source Ta = 25C f = 1MHz VGS = 0 V 1 -0.1 -0.3 -1 -3 -10 -30 -100 0 -80 -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) PD - Ta 2 Device mounted on a glass-epoxy board (a) Dynamic input/output characteristics -40 Common source ID = -4.5 A Ta = 25C Pulse test 16 Drain power dissipation PD (W) 1.6 (1) Drain-source voltage -20 VDD = -24 V 8 0.8 (3) (4) 0.4 VGS -10 4 0 0 40 80 120 160 200 0 0 8 16 24 0 32 Ambient temperature Ta (C) Total gate charge Qg (nC) 6 2006-11-13 Gate-source voltage 1.2 (2) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s VDS (V) -30 12 VGS (V) TPC8403 P-channel rth - tw 1000 Device mounted on a glass-epoxy board (a) (Note 2a) 500 (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) (4) (3) (2) (1) Normalized transient thermal impedance rth (C/W) 100 50 30 10 5 3 1 0.5 0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (S) Safe operating area 100 Single-device value at dual operation (Note 3b) ID max (pulse) * 10 1 ms * Drain current ID (A) 10 ms * 1 0.1 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.01 0.01 0.1 1 VDSS max 10 100 Drain-source voltage VDS (V) 7 2006-11-13 TPC8403 N-channel ID - VDS 10 10 V 8V 8 6V 4 V 3.6 V 3.4 V 3.3 V 16 20 10 V 6 V 4V ID - VDS 3.8 V Common source Ta = 25C Pulse test 3.6 V Drain current ID (A) 6 Drain current ID (A) 3.2 V 3.1 V 3V 4 2.9 V 2 Common source Ta = 25C Pulse test 0.2 0.4 0.6 2.8 V VGS = 2.6 V 0.8 1.0 8V 12 3.4 V 8 3.2 V 3V 2.8 V VGS = 2.6 V 4 0 0 0 0 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) 20 ID - VGS Ta = -55C 25C 0.6 VDS - VGS Common source Ta = 25C Pulse test 100C VDS (V) Drain-source voltage 16 0.5 Drain current ID (A) 12 0.4 0.3 8 0.2 ID = 6 A 0.1 0 0 3A 1.5 A 2 4 6 8 10 12 4 Common source VDS = 10 V Pulse test 1 2 3 4 5 6 0 0 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 50 30 Common source VDS = 10 V Pulse test 100 RDS (ON) - ID Common source Ta = 25C Pulse test (S) Forward transfer admittance Yfs Ta = 25C 10 5 3 Ta = 100C Drain-source ON resistance RDS (ON) (m) Ta = -55C 50 30 VGS = 4.5 V VGS = 10 V 10 1 0.5 0.3 5 3 0.1 0.1 0.3 1 3 10 30 100 1 0.1 0.3 1 3 10 30 100 Drain current ID (A) Drain current ID (A) 8 2006-11-13 TPC8403 N-channel RDS (ON) - Ta 60 6A 30 10 5 IDR - VDS (A) 50 Drain-source ON resistance RDS (ON) (m) 40 ID = 1.5 A Drain reverse current IDR VGS = 4.5 V 3A 6A 10 3 5 3 VGS = 0 V 1 0.5 0.3 Common source Ta = 25C Pulse test -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 1 30 ID = 1.5 A 20 VGS = 10 V 3A 10 Common source 0 -80 Pulse test -40 0 40 80 120 160 0.1 0 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 3 Vth - Ta Common source VDS = 10 V ID = 1 mA Pulse test 1000 Ciss Coss Vth (V) Gate threshold voltage Capacitance C (pF) 2 100 Crss 1 10 Common source Ta = 25C f = 1MHz VGS = 0 V 0.3 1 3 10 30 100 0 -80 -40 0 40 80 120 160 1 0.1 Ambient temperature Ta (C) Drain-source voltage VDS (V) PD - Ta 2 Device mounted on a glass-epoxy board (a) Dynamic input/output characteristics 40 Common source ID = 6 A Ta = 25C Pulse test 30 VDD = 24 V 20 VGS 10 4 8 12 16 Drain power dissipation PD (W) 1.6 (1) Drain-source voltage 0.8 (3) (4) 0.4 0 0 40 80 120 160 200 0 0 8 16 24 0 32 Ambient temperature Ta (C) Total gate charge Qg (nC) 9 2006-11-13 Gate-source voltage 1.2 (2) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s VDS (V) VGS (V) TPC8403 N-channel rth - tw 1000 Device mounted on a glass-epoxy board (a) (Note 2a) 500 (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) Normalized transient thermal impedance rth (C/W) (4) (3) (2) (1) 100 50 30 10 5 3 1 0.5 0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (S) Safe operating area 100 Single-device value at dual operation (Note 3b) ID max (pulse) * 10 1 ms * Drain current ID (A) 10 ms * 1 0.1 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.01 0.01 0.1 1 VDSS max 10 100 Drain-source voltage VDS (V) 10 2006-11-13 TPC8403 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 11 2006-11-13 |
Price & Availability of TPC840306
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |